isc Silicon PNP Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 70(Min)@ (VCE= -2V, IC= -1A) ·Low Saturation Volt...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 70(Min)@ (VCE= -2V, IC= -1A) ·Low Saturation Voltage-
: VCE(sat)= -0.4V(Max)@ (IC= -5A, IB= -0.25A) ·Fast Switching Time ·Complement to Type 2SC3748 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters, converters (strobo, flash, fluorescent lamp
lighting circuit). ·Power amp(high power car stereo, motor controller). ·High-speed switching (switching
regulator, driver).
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-12
A
2 W
30
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SA1471
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.25A
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutof...