2SA1490

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3854 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1490 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -3A; VCE= -4V fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= -12V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= -4A, RL= 10Ω, IB1= -IB2= -0.4A, VCC= -40V 2SA1490 MIN TYP. MAX UNIT -120 V -1.5 V -100 μA -100 μA 50 20 MHz 0.25 μs 0.7 μs 0.2 μs NOTICE： ISC reserves the rights to make changes of the cont...