2SA1601

isc Silicon PNP Power Transistor 2SA1601 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -7.5A ·Large Current Capability-IC= -15A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for mid-switching applications, and is ideal for use as a ramp driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -30 A IB Base Current-Continuous -2 A IBM Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 45 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.77 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7.5A; IB= -0.4A VBE(sat) Base-Emitter Saturation Voltage IC= -7.5A; IB= -0.4A ICBO Collector Cutoff Current VCB= -60V; IE= 0 ICEO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= -40V; IB= 0 VEB= -7V; IC= 0 ...