isc Silicon PNP Power Transistor
2SA1694
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4467 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMB...