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2SA1758

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor 2SA1758 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= -2V, IC= -2A) ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -6A, IB= -0.3A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power swi...

Inchange Semiconductor

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