2SA1771

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -14 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1.2 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1771 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -0.3A ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -14V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -1V hFE-2 DC Current Gain IC= -6A; VCE= -1V 2SA1771 MIN TYP. MAX UNIT -80 V -0.4 V -1.2 V -10 μA -10 μA 100 320 40 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informatio...