2SA1805

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1805 DESCRIPTION ·With TO-3PML package ·Complement to type 2SC4690 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -5 -10 -20 -1 80 150 -55~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg www.DataSheet4U.com Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-7A;IB=-0.7A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-5V IE=0; VCB=-10V;f=1MHz 55 35 30 480 MIN -140 TYP. 2SA1805 MAX UNIT V -2.0 -1.5 -5 -5 160 V V μA μA MHz pF ‹ hFE-1 classifications R 55-110 O 80-1...