L74VHC1G03

LESHAN RADIO COMPANY, LTD. 2–Input NAND Gate with Open Drain Output L74VHC1G03 The L74VHC1G03 is an advanced high speed CMOS 2–input NOR gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including an open drain output which provides the capability to set output switching level. This allows the L74VHC1G03 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V using an external resistor and power supply. The L74VHC1G03 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. High Speed: t PD = 3.6 ns (Typ) at V CC = 5 V Low Internal Power Dissipation: I CC = 2 mA (Max) at T A = 25°C Power Down Protection Provided on Inputs Pin and Function Compatible with Other Standard Logic Families Chip Complexity: FETs = 62; Equivalent Gates = 16 MARKING DIAGRAMS 5 4 1 2 3 VPd SC–88A / SOT–353/SC–70 DF SUFFIX Pin 1 d = Date Code 5 4 Figure 1. Pinout (Top View) 1 2 3 VPd Figure 2. Logic Symbol Pin 1 d = Date Code TSOP–5/SOT–23/SC–59 DT SUFFIX FUNCTION TABLE PIN ASSIGNMENT 1 2 3 4 5 IN B IN A GND OUT Y V CC A L L H H Inputs B L H L H Output Y Z L L L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. www.DataSheet4U.c...