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SBF13005 Dataheets PDF



Part Number SBF13005
Manufacturers SemiWell Semiconductor
Logo SemiWell Semiconductor
Description High Voltage Fast-Switching NPN Power Transistor
Datasheet SBF13005 DatasheetSBF13005 Datasheet (PDF)

SemiWell Semiconductor SBF13005 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed (Typical [email protected]) ◆ Minimum Lot-to-Lot hFE Variation ◆ Low VCE(sat) (Typical [email protected]/0.5A) ◆ Wide Reverse Bias S.O.A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. TO-220F 1 2 3 Abso.

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SemiWell Semiconductor SBF13005 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed (Typical [email protected]) ◆ Minimum Lot-to-Lot hFE Variation ◆ Low VCE(sat) (Typical [email protected]/0.5A) ◆ Wide Reverse Bias S.O.A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. TO-220F 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP < 5 ms ) Base Current Base Peak Current ( tP < 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max. Operating Junction Temperature Value 700 400 9.0 4.0 8.0 2.0 4.0 30 - 65 ~ 150 150 Units V V V A A A A W °C °C Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Value 4.17 Units °C/W Oct, 2002. Rev. 1 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved 1/6 www.DataSheet4U.com SBF13005 Electrical Characteristics Symbol ICEV VCEO(sus) ( TC = 25 °C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Condition VCE = 700V VCE = 700V IC = 10 mA IC = 1.0A IC = 2.0A IC = 4.0A IC = 1.0A IC = 2.0A IC = 1.0A IC = 2.0A IC = 2.0A IB1 = 0.4A TP = 25㎲ VCC = 15V IB1 = 0.4A L = 0.35mH VCC = 15V IB1 = 0.4A L = 0.35mH IC = 2.0A IB2 = - 1.0A Vclamp = 300V IC = 2.0A IB2 = - 1.0A Vclamp = 300V TC = 100 °C IB = 0.2A IB = 0.5A IB = 1.0A IB = 0.2A IB = 0.5A VCE = 5V VCE = 5V VCC = 125V IB2 = - 0.4A TC = 100 °C Min - Typ - Max 1.0 5.0 - Units mA 400 - V VCE(sat) Collector-Emitter Saturation Voltage - - 0.3 0.5 1.0 1.2 1.6 40 40 V VBE(sat) Base-Emitter Saturation Voltage - - V hFE DC Current Gain Resistive Load Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time 10 8 - ts tf - 2.5 0.15 4.0 0.4 ㎲ ts tf - 1.1 0.07 2.0 0.3 ㎲ ts tf - 1.2 0.08 3.0 0.4 ㎲ ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2% 2/6 SBF13005 Fig 1. Static Characteristics 6 IB = 1000mA IB = 800mA IB = 600mA IB = 500mA IB = 400mA 3 IB = 300mA IB = 200mA 2 IB = 100mA 45 40 35 Fig 2. DC Current Gain 5 IC, Collector Current [A] hFE, DC Current Gain 4 30 25 20 15 TJ = 125 C TJ = 25 C o o ※ Notes : 10 5 1 IB = 0mA 0 0 1 2 3 4 5 0 0.01 VCE = 5V VCE = 1V 0.1 1 VCE, Collector-Emitter Voltage [V] IC, Collector Current [A] Fig 3. Collector-Emitter Saturation Voltage 1.2 10 1.1 Fig 4. Base-Emitter Saturation Voltage VCE, Collector-Emitter Voltage [V] VBE, Base-Emitter Voltage [V] 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.1 1 TJ = 25 C o TJ = 125 C o 0.1 TJ = 25 C ※ Note : hFE = 5 o TJ = 125 C ※ Note : hFE = 5 o 0.01 0.1 1 10 1 10 IC, Collector Cu.


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