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DSEI1X31

IXYS

Fast Recovery Epitaxial Diodes

Fast Recovery Epitaxial Diodes (FRED) DSEI 1x 31 IFAVM = 30 A VRRM = 600 V trr = 35 ns miniBLOC, SOT-227 B VRSM V 640 ...


IXYS

DSEI1X31

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Fast Recovery Epitaxial Diodes (FRED) DSEI 1x 31 IFAVM = 30 A VRRM = 600 V trr = 35 ns miniBLOC, SOT-227 B VRSM V 640 VRRM V 600 Type DSEI 1x 31-06C DSEI 1x 31 Symbol IFRMS IFAVM  ¬ IFRM IFSM Test Conditions Maximum Ratings (per diode) 70 30 375 300 320 260 280 450 420 340 320 -40...+150 150 -40...+150 A A A A A A A As A2s As A2s °C °C °C W V~ Nm/lb.in. Nm/lb.in. g 2 2 TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Features l l l TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine ∫i dt 2 l l l l l TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot VISOL Md Weight Symbol IR Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 30 A; VR = VRRM VR = 0.8 VRRM VR = 0.8 VRRM TVJ = 150°C TVJ = 25°C TC = 25°C 50/60 Hz, RMS IISOL ≤ 1 mA Mounting torque Terminal connection torque (M4) International standard package miniBLOC (ISOTOP compatible) Isolation voltage 2500 V~ UL registered E 72873 Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Applications l 100 2500 1.5/13 1.5/13 30 l l l l l l Characteristic Values (per diode) typ. max. 100 50 7 1.4 1.6 1.01 7.1 1.25 0.05 µA µA mA V V V mΩ K/W K/W ns A l Antiparallel diode for high frequency switching devices Anti saturation diode ...




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