U440 MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U440
The U440 is a tightly matched Monolithic Dual N-Channel JFET
The U440 are monolithic dual JFETs mounted in a single TO-71 package. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. The U440 is a direct replacement for discontinued Siliconix U440. The hermetically sealed TO-71 is well suited for military applications. (See Packaging Information). U440 Applications: Wideband Differential Amps High-Speed,Temp-Compensated SingleEnded Input Amps High-Speed Comparators Impedance Converters and vibrations detectors. MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VGS1 – VGS2 | Differential Gate to Source Cutoff Voltage ∆|VGS1 – VGS2 | / ∆T Differential Gate to Source Cutoff Voltage Change with Temperature IDSS1 / IDSS2 Gate to Source Saturation Current Ratio Gfs1 / Gfs2 Forward Transconductance Ratio2
FEATURES Direct Replacement for SILICONIX U440 HIGH CMRR LOW GATE LEAKAGE ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (Total) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source Gate to Gate MIN TYP 20 MAX 10 UNITS mV µV/°C %
CMRR ≥ 85dB IGSS ≤ 1 pA
‐65°C to +150°C ‐55°C to +135°C 500mW 50mA ‐25V ‐25V ±50V CONDITIONS VDG = 10V, ID = 5mA VDG = 10V, ID = 5mA TA = ‐55°C to +125°C VDS = 10V, VGS = 0V
CMRR
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0.07 0.97 85 % Common Mode Rejection Ratio dB TYP. ‐3.5 15 ‐1 ‐1 6 70 3 1 4 MAX. ‐6 30 ‐500 ‐500 9 200 UNITS V V mA pA pA mS µS pF pF nV/√Hz CONDITIONS IG = ‐1µA, VDS = 0V VDS = 10V, ID = 1nA VDS = 10V, VGS = 0V VGS = ‐15V, VDS = 0V VDG = 10V, ID = 5mA Forward Transconductance Output Conductance Input Capacitance Reverse Transfer Capacitance Equivalent Input Noise Voltage 4.5
TO-71 (Top View)
VDS = 10V, ID = 5mA, f = 1kHz VDG = 5 to 10V, ID = 5mA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVGSS Gate to Source Breakdown Voltage ‐25 VGS(off) Gate to Source Cutoff Voltage ‐1 IDSS Gate to Source Saturation Current 6 IGSS Gate Leakage Current3 IG Gate Operating Current gfs gos CISS CRSS en
VDS = 10V, ID= 5mA, f = 1kHz VDS = 10V, ID = 5mA, f = 1MHz VDS = 10V, ID = 5mA, f = 10kHz
Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% 3. Assumes smaller value in numerator
Available Packages: U440 in TO-71 U440 available as bare die Please contact Micross for full package and die dimensions: Email:
[email protected] www.DataSheet4U.com Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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