Amplifier
U309 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U309
The U309 is a high frequency n-channel JFET off...
Description
U309 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U309
The U309 is a high frequency n-channel JFET offering a wide range and low noise performance. The hermetically sealed TO-18 package is well suited for high reliability and harsh environment applications. (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR SILICONIX U309 OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE ABSOLUTE MAXIMUM RATINGS @ 25°C1 Gpg = 11.5dB NF = 2.7dB
Maximum Temperatures Storage Temperature ‐55°C to +150°C High Power Low Noise gain Operating Junction Temperature ‐55°C to +135°C Dynamic Range greater than 100dB Maximum Power Dissipation Easily matched to 75Ω input Continuous Power Dissipation 500mW U309 Applications: MAXIMUM CURRENT Gate Current 10mA UHV / VHF Amplifiers MAXIMUM VOLTAGES Mixers Gate to Drain Voltage or Gate to Source Voltage ‐25V Oscillators U309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNIT CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ V VDS = 0V, IG = ‐1µA VGS(F) Gate to Source Forward Voltage 0.7 ‐‐ 1 VDS = 0V, IG = 10mA VGS(off) Gate to Source Cutoff Voltage ‐1 ‐‐ ‐4 VDS = 10V, ID = 1nA IDSS Drain to Source Saturation Current2 12 ‐‐ 30 mA VDS = 10V, VGS = 0V IG Gate Operating Current (Note 3) ‐‐ ‐15 ‐‐ pA VDG = 9V, ID = 10mA rDS(on) Drain to Source On Resistance ‐‐ 35 ‐‐ Ω VGS = 0V, ID ...
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