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SSTPAD10

Micross

Dual Low Leakage

SSTPAD10 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces discontinued Siliconix SSTPAD10 The SSTPAD10 is a low leaka...


Micross

SSTPAD10

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Description
SSTPAD10 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces discontinued Siliconix SSTPAD10 The SSTPAD10 is a low leakage Pico-Amp Diode packaged in SOT-23 The SSTPAD10 extremely low-leakage diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. The SSTPAD10 features a leakage current of -10 pA and is well suited for use in applications such as input protection for operational amplifiers. FEATURES  DIRECT REPLACEMENT FOR SILICONIX SSTPAD10  REVERSE BREAKDOWN VOLTAGE  ULTRALOW LEAKAGE  REVERSE CAPACITANCE  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Forward Current (Note 1)    BVR ≥ ‐30V  ≤ 10 pA  Crss ≤ 2pF  SSTPAD10 Benefits: ƒ ƒ ƒ Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C  ‐55°C to +135°C  350mW  10mA  SSTPAD10 Applications: ƒ ƒ Op Amp Input Protection Multiplexer Overvoltage Protection   SSTPAD10 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  TYP.  BVR  Reverse Breakdown Voltage  ‐35  ‐‐  VF  Forward Voltage  ‐‐  0.8  CrSS  Total Reverse Capacitance  ‐‐  1.5  IR  Maximum Reverse Leakage Current  ‐‐  ‐‐  Click To Buy MAX.  ‐‐  1.5  2  ‐10  UNITS  V  V  pF  pA  SOT-23 (Top View) CONDITIONS  IR = ‐1µA  ...




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