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SSTDPAD5

Micross

Dual Low Leakage

SSTDPAD5 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix SSTDPAD5 The SSTDPAD5 is a low ...


Micross

SSTDPAD5

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Description
SSTDPAD5 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix SSTDPAD5 The SSTDPAD5 is a low leakage Monolithic Dual Pico-Amp Diode The SSTDPAD5 extremely low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. In addition the monolithic dual construction allows excellent capacitance matching per diode. The SSTDPAD5 features a leakage current of -5 pA and is well suited for use in applications such as input protection for operational amplifiers. FEATURES  DIRECT REPLACEMENT FOR SILICONIX SSTDPAD5  HIGH ON ISOLATION  EXCELLENT CAPACITANCE MATCHING  ULTRALOW LEAKAGE  REVERSE BREAKDOWN VOLTAGE  REVERSE CAPACITANCE  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Forward Current (Note 1)    20fA  ∆CR ≤ 0.5pF  ≤ 5 pA  BVR ≥ ‐30V  Crss ≤ 4.0pF  SSTDPAD5 Benefits: ƒ ƒ ƒ Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C  ‐55°C to +135°C  500mW  50mA  SSTDPAD5 Applications: ƒ ƒ Op Amp Input Protection Multiplexer Overvoltage Protection   SSTDPAD5 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  TYP.  BVR  Reverse Breakdown Voltage  ‐45  ‐‐  VF  Forward Voltage  ‐‐  0.8  CrSS ...




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