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RMTR10300 Dataheets PDF



Part Number RMTR10300
Manufacturers Raytheon
Logo Raytheon
Description 10-30 GHz Tripler MMIC
Datasheet RMTR10300 DatasheetRMTR10300 Datasheet (PDF)

RMTR10300 10-30 GHz Tripler MMIC ADVANCED INFORMATION Description The RMTR10300 is a 10 to 30 GHz Tripler designed to be used in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The RMTR10300 is a three stage amplifier in which the first stage acts as a harmonic generator followed by two stages of amplification at 3Fo. The RMTR10300 utilizes Raytheon’s advanced 0.15 µm gate length PHEMT process and is sufficiently versati.

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RMTR10300 10-30 GHz Tripler MMIC ADVANCED INFORMATION Description The RMTR10300 is a 10 to 30 GHz Tripler designed to be used in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The RMTR10300 is a three stage amplifier in which the first stage acts as a harmonic generator followed by two stages of amplification at 3Fo. The RMTR10300 utilizes Raytheon’s advanced 0.15 µm gate length PHEMT process and is sufficiently versatile to serve in a variety of multiplier applications. Features 2 mil substrate Conversion Loss 0 dBm (typ.) Wide operating bandwidth Chip size 3.224 mm x 1.134 mm Absolute Maximum Ratings Parameter Positive DC Voltage (+5 V Typical) Negative DC Voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Symbol Vd Vg Vdg Id PIN TC Tstg Rjc Value +6 -2 +8 187 +22 -30 to +85 -55 to +125 117 Unit Volts Volts Volts mA dBm °C °C °C/W (At 25°C), 50 Ω system, Vd = +5 V, Quiescent current (Idq)= 75 mA, Pin=+17 dBm Electrical Characteristics Parameter Input Frequency Range Output Frequency Range Gate Supply Voltage (Vg)1 Input Drive Power @ Fo Output Power @ 3Fo Min 9 27 +15 Typ - 0.2 +17 +17 Max Unit 10.75 GHz 32.25 GHz V dBm dBm Parameter Conversion Loss Fundamental Rejection 2nd Harmonic Rejection 4th Harmonic Rejection Input Return Loss Output Return Loss Min Typ 0 -30 -15 -25 8 7 Max Unit dBm dBc dBc dBc dB dB www.DataSheet4U.com Note: 1. Typical range of the negative gate voltage is -0.5 to 0.0V to set typical Idq of 75 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised April 6, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMTR10300 10 – 30 GHz Tripler MMIC ADVANCED INFORMATION Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding to a typically 2 mil between the chip and the substrate material. Drain Supply (Vd1) Drain Supply (Vd2) Drain Supply (Vd3) Figure 1 Functional Block Diagram MMIC Chip RF IN Fo X3 RF OUT 3Fo Gate Supply (Vg1, Vg2 & Vg3) Ground (Back of Chip) Figure 2 Chip Layout and Bond Pad Locations Chip Size is 3.224 mm x 1.134 mm. Back of chip is RF ground. Dimensions in mm 0.113 1.134 1.723 2.025 2.529 3.042 1.019 1.007 0.777 0.577 0.377 0.115 0.127 0.182 0.0 0.974 1.883 2.369 3.111 3.224 Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised April 6, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMTR10300 10 – 30 GHz Tripler MMIC ADVANCED INFORMATION Figure 3 Recommended Application Schematic Circuit Diagram Drain Supply (Vd = +5 V) L= Bond Wire Inductance 10,000 pF L L 100 pF 100 pF L L 100 pF L L L RF IN Fo X3 RF OUT 3Fo L Ground (Back of Chip) L 100 pF 10,000 pF Gate Supply (Vg) Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised April 6, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMTR10300 10 – 30 GHz Tripler MMIC ADVANCED INFORMATION Figure 4 Recommended Assembly Diagram Die-Attach 80Au/20Sn 100pF ` Drain Supply (Vd = +5 V) 10,000pF 100pF 5 mil Thick Alumina 50-Ohm 5mil Thick Alumina 50-Ohm RF Input RF Output 2 mil Gap L< 0.015” (4 Places) Gate Supply (Vg) Note: Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief. Recommended Procedure for Biasing and Operation CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier: Step 1: Turn off RF in.


36DA RMTR10300 RT9607


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