Document
RMTR10300
10-30 GHz Tripler MMIC
ADVANCED INFORMATION
Description
The RMTR10300 is a 10 to 30 GHz Tripler designed to be used in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The RMTR10300 is a three stage amplifier in which the first stage acts as a harmonic generator followed by two stages of amplification at 3Fo. The RMTR10300 utilizes Raytheon’s advanced 0.15 µm gate length PHEMT process and is sufficiently versatile to serve in a variety of multiplier applications.
Features
2 mil substrate Conversion Loss 0 dBm (typ.) Wide operating bandwidth Chip size 3.224 mm x 1.134 mm
Absolute Maximum Ratings
Parameter Positive DC Voltage (+5 V Typical) Negative DC Voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside)
Symbol Vd Vg Vdg Id PIN TC Tstg Rjc
Value +6 -2 +8 187 +22 -30 to +85 -55 to +125 117
Unit Volts Volts Volts mA dBm °C °C °C/W
(At 25°C), 50 Ω system, Vd = +5 V, Quiescent current (Idq)= 75 mA, Pin=+17 dBm
Electrical Characteristics
Parameter Input Frequency Range Output Frequency Range Gate Supply Voltage (Vg)1 Input Drive Power @ Fo Output Power @ 3Fo
Min 9 27 +15
Typ
- 0.2 +17 +17
Max Unit 10.75 GHz 32.25 GHz V dBm dBm
Parameter Conversion Loss Fundamental Rejection 2nd Harmonic Rejection 4th Harmonic Rejection Input Return Loss Output Return Loss
Min
Typ 0 -30 -15 -25 8 7
Max Unit dBm dBc dBc dBc dB dB
www.DataSheet4U.com
Note: 1. Typical range of the negative gate voltage is -0.5 to 0.0V to set typical Idq of 75 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised April 6, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMTR10300
10 – 30 GHz Tripler MMIC
ADVANCED INFORMATION
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding to a typically 2 mil between the chip and the substrate material.
Drain Supply (Vd1) Drain Supply (Vd2) Drain Supply (Vd3)
Figure 1 Functional Block Diagram
MMIC Chip
RF IN Fo
X3
RF OUT 3Fo
Gate Supply (Vg1, Vg2 & Vg3)
Ground (Back of Chip)
Figure 2 Chip Layout and Bond Pad Locations Chip Size is 3.224 mm x 1.134 mm. Back of chip is RF ground.
Dimensions in mm
0.113 1.134 1.723 2.025 2.529 3.042 1.019 1.007 0.777 0.577 0.377 0.115 0.127
0.182 0.0
0.974
1.883
2.369
3.111 3.224
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised April 6, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMTR10300
10 – 30 GHz Tripler MMIC
ADVANCED INFORMATION
Figure 3 Recommended Application Schematic Circuit Diagram
Drain Supply (Vd = +5 V)
L= Bond Wire Inductance
10,000 pF L
L 100 pF 100 pF L
L 100 pF L
L
L
RF IN Fo
X3
RF OUT 3Fo
L Ground (Back of Chip) L
100 pF
10,000 pF
Gate Supply (Vg)
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised April 6, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMTR10300
10 – 30 GHz Tripler MMIC
ADVANCED INFORMATION
Figure 4 Recommended Assembly Diagram
Die-Attach 80Au/20Sn 100pF
`
Drain Supply (Vd = +5 V)
10,000pF
100pF 5 mil Thick Alumina 50-Ohm
5mil Thick Alumina 50-Ohm
RF Input
RF Output
2 mil Gap L< 0.015” (4 Places) Gate Supply (Vg)
Note: Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Recommended Procedure
for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier: Step 1: Turn off RF in.