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LSPAD10

Micross

PicoAmp Diode

LSPAD10 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces discontinued Siliconix PAD10 LSPAD10 is a low leakage Pico-A...


Micross

LSPAD10

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Description
LSPAD10 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces discontinued Siliconix PAD10 LSPAD10 is a low leakage Pico-Amp Diode packaged in hermetic TO-72 The LSPAD10 extremely low-leakage diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. The LSPAD10 features a leakage current of -10 pA and is well suited for use in applications such as input protection for operational amplifiers. FEATURES  DIRECT REPLACEMENT FOR SILICONIX PAD10  REVERSE BREAKDOWN VOLTAGE  ULTRALOW LEAKAGE  REVERSE CAPACITANCE  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Forward Current (Note 1)    BVR ≥ ‐45V  ≤ 10 pA  Crss ≤ 2.0pF  www.DataSheet4U.com LSPAD10 Benefits: ƒ ƒ ƒ Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C  ‐55°C to +135°C  300mW  50mA  LSPAD10 Applications: ƒ ƒ Op Amp Input Protection Multiplexer Overvoltage Protection   LSPAD10 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  TYP.  BVR  Reverse Breakdown Voltage  ‐45  ‐‐  VF  Forward Voltage  ‐‐  0.8  CrSS  Total Reverse Capacitance  ‐‐  1.5  IR  Maximum Reverse Leakage Current  ‐‐  ‐‐  Click To Buy MAX.  ‐‐  1.5  2  ‐10  UNITS  V  V  pF  pA  TO-72 (Bottom View) CONDITI...




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