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LSID100

Micross

Dual PicoAmp Diodes

LSID100 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil LSID100 The LSID100 is a low leak...


Micross

LSID100

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Description
LSID100 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil LSID100 The LSID100 is a low leakage Monolithic Dual Pico-Amp Diode The LSID100 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. In addition the monolithic dual construction allows excellent capacitance matching per diode. The LSID100 features a leakage current of 0.1 pA and is well suited for use in applications such as input protection for operational amplifiers. FEATURES  DIRECT REPLACEMENT FOR INTERSIL LSID100  REVERSE LEAKAGE CURRENT  REVERSE BREAKDOWN VOLTAGE  REVERSE CAPACITANCE  ABSOLUTE MAXIMUM RATINGS (Note 1)  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   Maximum Currents Forward Current   Reverse Current  Maximum Voltages  Reverse Voltage  Diode to Diode Voltage  IR = 0.1pA  BVR ≥ 30V  Crss = 0.75pF  www.DataSheet4U.com LSID100 Benefits: ƒ ƒ ƒ ƒ ƒ Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation Op Amp Input Protection Multiplexer Overvoltage Protection ‐65°C to +200°C  ‐55°C to +150°C  300mW  20mA  100µA  30V  ±50V  LSID100 Applications:   LSID100 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  TYP.  BVR  Reverse Breakdown Voltage  30  ‐‐  VF...




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