LS842 MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
The LS842 is a hig...
LS842 MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
The LS842 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS842 features a 25mV offset and 40-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). FEATURES LOW DRIFT | V GS1‐2 / T| ≤40µV/°C LOW LEAKAGE IG = 10pA TYP. LOW NOISE en = 8nV/√Hz TYP. LOW OFFSET VOLTAGE | V GS1‐2| ≤25mV ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each
Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air – Total 400mW @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. 40 µV/°C VDG=20V, ID=200µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 25 mV VDG=20V, ID=200µA TYP. 60 ‐‐ ‐‐ ‐‐ 0.6 2 1 2 ‐‐ 10 ‐‐ 5 ‐‐ ‐‐ 0.1 0.01 100 75 ‐‐ ‐‐ ‐‐ 4 1.2 0.1 MAX...