LS5912C

LS5912C MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912C The LS5912C are monolithic dual JFETs. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. The LS5912C is a direct replacement for discontinued Siliconix and National LS5912C. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). FEATURES  Improved Direct Replacement for SILICONIX & NATIONAL 2N5912C  LOW NOISE (10KHz)  en~ 4nV/√Hz  HIGH TRANSCONDUCTANCE (100MHz)  gfs ≥ 4000µS  ABSOLUTE MAXIMUM RATINGS 1  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation (Total)  Maximum Currents  Gate Current  Maximum Voltages  Gate to Drain  Gate to Source        MIN  ‐‐  ‐‐  0.95  ‐‐  TYP  ‐‐  ‐‐  ‐‐  MAX  40  40  1  UNITS  mV  µV/°C  %  ‐65°C to +150°C  ‐55°C to +135°C  www.DataSheet4U.com 500mW  50mA  ‐25V  ‐25V        CONDITIONS  VDG = 10V, ID = 5mA            VDG = 10V, ID = 5mA       TA = ‐55°C to +125°C  VDS = 10V, VGS = 0V  LS5912C Applications: ƒ Wideband Differential Amps ƒ High-Speed,Temp-Compensated SingleEnded Input Amps ƒ High-Speed Comparators ƒ Impedance Co...