Switching
LS5116 P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N5116
This analog switch is designed for invertin...
Description
LS5116 P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N5116
This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The SOT-23 provides a low cost option and ease of manufacturing. (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5116 LOW ON RESISTANCE rDS(on) ≤ 150Ω LOW CAPACITANCE 6pF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures Storage Temperature ‐55°C to +200°C LS5116 Benefits: Operating Junction Temperature ‐55°C to +200°C Low On Resistance Maximum Power Dissipation ID(off) ≤ 500 pA Continuous Power Dissipation 500mW Switches directly from TTL logic MAXIMUM CURRENT LS5116 Applications: Gate Current (Note 1) IG = ‐50mA Analog Switches MAXIMUM VOLTAGES Commutators Gate to Drain Voltage VGDS = 30V Choppers Gate to Source Voltage VGSS = 30V LS5116 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 ‐‐ ‐‐ IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage 1 ‐‐ 4 VDS = ‐15V, ID = ‐1nA V VGS(F) Gate to Source Forward Voltage ‐‐ ‐0.7 ‐1 IG = ‐1mA, VDS = 0V ‐‐ ‐1.0 ‐‐ VGS = 0V, ID = ‐15mA VDS(on) Drain to Source On Voltage ‐‐ ‐0.7 ‐‐ VGS = 0V, ID = ‐7mA ‐‐ ‐0.5 ‐0.6 VGS = 0V, ID = ‐3mA IDSS Drain to Source Saturation Current (Note 2) ‐5 ‐‐ ‐25 mA VDS = ‐15V, V...
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