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LS5116

Micross

Switching

LS5116 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5116 This analog switch is designed for invertin...


Micross

LS5116

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Description
LS5116 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5116 This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The SOT-23 provides a low cost option and ease of manufacturing. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX 2N5116  LOW ON RESISTANCE  rDS(on) ≤ 150Ω  LOW CAPACITANCE  6pF  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  ‐55°C to +200°C  LS5116 Benefits: Operating Junction Temperature  ‐55°C to +200°C  ƒ Low On Resistance Maximum Power Dissipation  ƒ ID(off) ≤ 500 pA Continuous Power Dissipation   500mW  ƒ Switches directly from TTL logic MAXIMUM CURRENT LS5116 Applications: Gate Current (Note 1)  IG = ‐50mA  ƒ Analog Switches MAXIMUM VOLTAGES  ƒ Commutators Gate to Drain Voltage  VGDS = 30V  ƒ Choppers Gate to Source Voltage  VGSS = 30V  LS5116 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  30  ‐‐  ‐‐    IG = 1µA,   VDS = 0V    VGS(off)  Gate to Source Cutoff Voltage  1  ‐‐  4  VDS = ‐15V, ID = ‐1nA  V  VGS(F)  Gate to Source Forward Voltage  ‐‐  ‐0.7  ‐1  IG = ‐1mA,   VDS = 0V      ‐‐  ‐1.0  ‐‐  VGS = 0V, ID = ‐15mA  VDS(on)  Drain to Source On Voltage  ‐‐  ‐0.7  ‐‐  VGS = 0V, ID = ‐7mA  ‐‐  ‐0.5  ‐0.6  VGS = 0V, ID = ‐3mA  IDSS  Drain to Source Saturation Current (Note 2)  ‐5  ‐‐  ‐25  mA  VDS = ‐15V, V...




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