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LS4119 Dataheets PDF



Part Number LS4119
Manufacturers Micross
Logo Micross
Description High Impedence
Datasheet LS4119 DatasheetLS4119 Datasheet (PDF)

LS4119 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N4119 The LS4119 is an Ultra-High Input Impedance N-Channel JFET The LS4119 provides ultra-high input impedance. The device is specified with a 10-pA limit and is ideal for use as a high-impedance sensitive front-end amplifier. FEATURES  DIRECT REPLACEMENT FOR SILICONIX 2N4119  LOW POWER  MINIMUM CIRCUIT LOADING  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating J.

  LS4119   LS4119


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LS4119 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N4119 The LS4119 is an Ultra-High Input Impedance N-Channel JFET The LS4119 provides ultra-high input impedance. The device is specified with a 10-pA limit and is ideal for use as a high-impedance sensitive front-end amplifier. FEATURES  DIRECT REPLACEMENT FOR SILICONIX 2N4119  LOW POWER  MINIMUM CIRCUIT LOADING  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Gate Current (Note 1)  MAXIMUM VOLTAGES  Gate to Drain or Gate to Source (Note 2)    IDSS<90 µA   IGSS<10 pA  www.DataSheet4U.com LS4119 Benefits: ƒ ƒ ƒ ƒ Insignificant Signal Loss/Error Voltage with High-Impedance Source Low Power Consumption (Battery) Maximum Signal Output, Low Noise High Sensitivity to Low-Level Signals ‐65°C to +175°C  ‐55°C to +150°C  300mW  50mA  ‐40V    LS4119 Applications: ƒ ƒ ƒ ƒ High-Impedance Transducer Smoke Detector Input Infrared Detector Amplifier Precision Test Equipment   LS4119 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  ‐40  ‐‐  ‐‐  V  IG = ‐1µA,   VDS = 0V  VGS(off)  Gate to Source Cutoff Voltage  ‐2  ‐‐  ‐6  V                    VDS = 10V,   ID = 1nA  IDSS  Gate to Source Saturation Current  0.20  ‐‐  0.60  mA  VDS = 10V,   VGS = 0V  IGSS  Gate Leakage Current  ‐‐  ‐‐  ‐10  pA  VGS = ‐20V,  VDS = 0V  ‐‐  ‐‐  ‐25  VGS = ‐20V,  VDS = 0V,  150°C  gfs  Forward Transconductance(Note 3)  100  ‐‐  330  µmho  VDS = 10V,   VGS = 0V,   f = 1kHz    gos  Output Conductance  ‐‐  ‐‐  10  Ciss  Input Capacitance  ‐‐  ‐‐  3  pF  VDS = 10V,   VGS = 0V,   f = 1MHz  Crss  Reverse Transfer Capacitance  ‐‐  ‐‐  1.5                                1 . Absolute maximum ratings are limiting values above which LS4119 serviceability may be impaired.   NOTES  2.  Due to symmetrical geometry, these units may be operated with source and drain leads interchanged  3. This parameter is measured during a 2ms interval 100ms after power is applied.  (Not a JEDEC condition.)  Click To Buy Available Packages: LS4119 in SOT-23 LS4119 in bare die. SOT-23 (Top View) Please contact Micross for full package and die dimensions Micross Components Europe Tel: +44 1603 788967 Email: [email protected] Web: http://www.micross.com/distribution Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx .


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