LS351 MONOLITHIC DUAL PNP TRANSISTOR
Linear Systems Monolithic Dual PNP Transistor
The LS351 is a monolithic pair of PN...
LS351 MONOLITHIC DUAL
PNP TRANSISTOR
Linear Systems Monolithic Dual
PNP Transistor
The LS351 is a monolithic pair of
PNP transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). LS351 Features:
FEATURES HIGH GAIN TIGHT VBE MATCHING HIGH ft ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (One side) Continuous Power Dissipation (Both sides) Linear Derating factor (One side) Linear Derating factor (Both sides) Maximum Currents Collector Current MIN ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ TYP 0.4 1 ‐‐ ‐‐ 5 MAX 1.0 10 5 0.3 ‐‐
hFE ≥ 150 @ 10µA‐1mA |VBE1 – VBE2 |= 0.4mV TYP. 275MHz TYP. @ 1mA
‐65°C to +200°C ‐55°C to +150°C 250mW 500mW 2.3mW/°C 4.3mW/°C 10mA UNITS mV µV/°C nA nA/°C % CONDITIONS IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V
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Very high gain Tight matching Low Output Capacitance
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)|...