LS303 MONOLITHIC DUAL NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
The LS303 is a monolith...
LS303 MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual
NPN
The LS303 is a monolithic pair of high voltage SuperBeta
NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). LS303 Features:
FEATURES HIGH GAIN LOW OUTPUT CAPACITANCE TIGHT VBE MATCHING HIGH ft ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (One side) Continuous Power Dissipation (Both sides) Linear Derating factor (One side) Linear Derating factor (Both sides) Maximum Currents Collector Current MIN ‐‐ ‐‐ ‐‐ TYP 0.2 1 0.5 5 MAX 1 5 1.5 ‐‐
hFE ≥ 2000 @ 1µA TYP. COBO ≤ 2.0pF |VBE1 – VBE2 |= 0.2mV TYP. 100MHz
‐65°C to +200°C ‐55°C to +150°C 250mW 500mW 2.3mW/°C 4.3mW/°C 5mA UNITS mV µV/°C nA % CONDITIONS IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V
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Very high gain Tight matching Low Output Capacitance
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆...