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LS120A

Micross

General Purpose

LS120A MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT120A The LS120A is a monolithic p...


Micross

LS120A

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Description
LS120A MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT120A The LS120A is a monolithic pair of NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The LS120A is a direct replacement for discontinued Intersil IT120A. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). LS120A Features: ƒ ƒ ƒ FEATURES  Direct Replacement for INTERSIL IT120A  HIGH  hFE @ LOW CURRENT  OUTPUT CAPACITANCE  VBE tracking ABSOLUTE MAXIMUM RATINGS 1  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation (One side)  Continuous Power Dissipation (Both sides)  Linear Derating factor (One side)  Linear Derating factor (Both sides)  Maximum Currents  Collector Current    MIN  ‐‐  ‐‐  ‐‐  TYP  ‐‐  ‐‐  ‐‐  MAX  1  3  2.5  UNITS  mV  µV/°C  nA  ≥ 200 @ 10µA  ≤ 2.0pF  ≤ 3.0µV°C  ‐65°C to +200°C  ‐55°C to +150°C  250mW  500mW  2.3mW/°C  4.3mW/°C  10mA    CONDITIONS  IC = 10µA, VCE = 5V  IC = 10µA, VCE = 5V  TA = ‐55°C to +125°C  IC = 10µA, VCE = 5V  www.DataSheet4U.com ƒ High hfe at low current Tight matching Tight VBE tracking Low Output Capacitance MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)  SYMBOL  CHARACTERISTIC  |VBE1 – VBE2 |  Base Emitter Voltage...




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