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JPAD100

Micross

PicoAmp Diode

JPAD100 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces discontinued Siliconix JPAD100 The JPAD100 is a low leakage ...


Micross

JPAD100

File Download Download JPAD100 Datasheet


Description
JPAD100 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces discontinued Siliconix JPAD100 The JPAD100 is a low leakage Pico-Amp Diode packaged in TO-92 The JPAD100 extremely low-leakage diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. The JPAD100 features a leakage current of -100 pA and is well suited for use in applications such as input protection for operational amplifiers. FEATURES  DIRECT REPLACEMENT FOR SILICONIX JPAD100  REVERSE BREAKDOWN VOLTAGE  ULTRALOW LEAKAGE  REVERSE CAPACITANCE  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Forward Current (Note 1)    BVR ≥ ‐35V  ≤ 100 pA  Crss ≤ 2.0pF  www.DataSheet4U.com JPAD100 Benefits: ƒ ƒ ƒ Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C  ‐55°C to +135°C  350mW  10mA  JPAD100 Applications: ƒ ƒ Op Amp Input Protection Multiplexer Overvoltage Protection   JPAD100 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  TYP.  BVR  Reverse Breakdown Voltage  ‐35  ‐‐  VF  Forward Voltage  ‐‐  0.8  CrSS  Total Reverse Capacitance  ‐‐  1.5  IR  Maximum Reverse Leakage Current  ‐‐  ‐‐  Click To Buy MAX.  ‐‐  1.5  2  ‐100  UNITS  V  V  pF  pA  TO-92 (Bottom View) C A 1 ...




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