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J309 Dataheets PDF



Part Number J309
Manufacturers Micross
Logo Micross
Description Amplifier
Datasheet J309 DatasheetJ309 Datasheet (PDF)

J309 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J309 The J309 is a high frequency n-channel JFET offering a wide range and low noise performance. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX J309  OUTSTANDING HIGH FREQUENCY GAIN   LOW HIGH FREQUENCY NOISE  ABSOLUTE MAXIMUM RATINGS @ 25°C1   Gpg = 11.5dB  NF = 2.7dB  Maximum Temperatures  Storage Temperature  ‐55°C.

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J309 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J309 The J309 is a high frequency n-channel JFET offering a wide range and low noise performance. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES  DIRECT REPLACEMENT FOR SILICONIX J309  OUTSTANDING HIGH FREQUENCY GAIN   LOW HIGH FREQUENCY NOISE  ABSOLUTE MAXIMUM RATINGS @ 25°C1   Gpg = 11.5dB  NF = 2.7dB  Maximum Temperatures  Storage Temperature  ‐55°C to +150°C  ƒ High Power Low Noise gain Operating Junction Temperature  ‐55°C to +135°C  ƒ Dynamic Range greater than 100dB Maximum Power Dissipation  ƒ Easily matched to 75Ω input Continuous Power Dissipation   350mW  J309 Applications: MAXIMUM CURRENT Gate Current  10mA  ƒ UHV / VHF Amplifiers MAXIMUM VOLTAGES  ƒ Mixers Gate to Drain Voltage or  Gate to Source Voltage   ‐25V  ƒ Oscillators         J309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNIT  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  ‐25  ‐‐  ‐‐  V  VDS = 0V, IG = ‐1µA  VGS(F)  Gate to Source Forward Voltage  0.7  ‐‐  1  VDS = 0V, IG = 10mA  VGS(off)  Gate to Source Cutoff Voltage  ‐1  ‐‐  ‐4  VDS = 10V,  ID = 1nA  IDSS  Drain to Source Saturation Current2  12  ‐‐  30  mA  VDS = 10V, VGS = 0V  IG  Gate Operating Current (Note 3)  ‐‐  ‐15  ‐‐  pA  VDG = 9V,  ID = 10mA  rDS(on)  Drain to Source On Resistance  ‐‐  35  ‐‐  Ω  VGS = 0V,  ID = 1mA                J309 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNIT  CONDITIONS  gfs  Forward Transconductance  10  14  ‐‐  mS  VDS = 10V,   ID = 10mA , f = 1kHz  gos  Output Conductance  ‐‐  110  250  µS  Ciss  Input Capacitance  ‐‐  4  5  pF  VDS = 10V,   VGS = ‐10V , f = 1MHz   Crss  Reverse Transfer Capacitance  ‐‐  1.9  2.5  en  Equivalent Noise Voltage  6  ‐‐  ‐‐  nV/√Hz  VDS = 10V,    ID = 10mA ,  f = 100Hz                J309 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted)  SYMBOL  CHARACTERISTIC  MIN  TYP  MAX  UNIT  CONDITIONS  J309 Benefits: www.DataSheet4U.com Click To Buy Noise Figure  Power Gain3  Forward Transconductance  Output Conductance  f = 105MHz  f = 450MHz  f = 105MHz  f = 450MHz  f = 105MHz  f = 450MHz  f = 105MHz  f = 450MHz  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  1.5  2.7  16  11.5  14  13  0.16  0.55  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  ‐‐  dB  dB          mS  Available Packages: LSJ309 in TO-92 LSJ309 in bare die. TO-92 (Bottom View) NF  Gpg  gfg  gog          VDS = 10V,    ID = 10mA    Absolute maximum    ratings are    limiting values above which J309 serviceability may be impaired.   Note 1 ‐  Note 2 ‐   Duty  Cycle ≤ 3%    Pulse test : PW ≤ 300µs,   Note 3 ‐ Measured at optimum input noise match          Components   Micross Europe         Tel: +44 1603 788967 Email: [email protected] Web: http://www.micross.com/distribution Please contact Micross for full package and die dimension.


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