J309 N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J309
The J309 is a high frequency n-channel JFET offering a wide range and low noise performance. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR SILICONIX J309 OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE ABSOLUTE MAXIMUM RATINGS @ 25°C1 Gpg = 11.5dB NF = 2.7dB
Maximum Temperatures Storage Temperature ‐55°C to +150°C High Power Low Noise gain Operating Junction Temperature ‐55°C to +135°C Dynamic Range greater than 100dB Maximum Power Dissipation Easily matched to 75Ω input Continuous Power Dissipation 350mW J309 Applications: MAXIMUM CURRENT Gate Current 10mA UHV / VHF Amplifiers MAXIMUM VOLTAGES Mixers Gate to Drain Voltage or Gate to Source Voltage ‐25V Oscillators J309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNIT CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ V VDS = 0V, IG = ‐1µA VGS(F) Gate to Source Forward Voltage 0.7 ‐‐ 1 VDS = 0V, IG = 10mA VGS(off) Gate to Source Cutoff Voltage ‐1 ‐‐ ‐4 VDS = 10V, ID = 1nA IDSS Drain to Source Saturation Current2 12 ‐‐ 30 mA VDS = 10V, VGS = 0V IG Gate Operating Current (Note 3) ‐‐ ‐15 ‐‐ pA VDG = 9V, ID = 10mA rDS(on) Drain to Source On Resistance ‐‐ 35 ‐‐ Ω VGS = 0V, ID = 1mA J309 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNIT CONDITIONS gfs Forward Transconductance 10 14 ‐‐ mS VDS = 10V, ID = 10mA , f = 1kHz gos Output Conductance ‐‐ 110 250 µS Ciss Input Capacitance ‐‐ 4 5 pF VDS = 10V, VGS = ‐10V , f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 1.9 2.5 en Equivalent Noise Voltage 6 ‐‐ ‐‐ nV/√Hz VDS = 10V, ID = 10mA , f = 100Hz J309 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP MAX UNIT CONDITIONS
J309 Benefits:
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Noise Figure Power Gain3 Forward Transconductance Output Conductance f = 105MHz f = 450MHz f = 105MHz f = 450MHz f = 105MHz f = 450MHz f = 105MHz f = 450MHz ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 1.5 2.7 16 11.5 14 13 0.16 0.55 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ dB dB mS Available Packages: LSJ309 in TO-92 LSJ309 in bare die. TO-92 (Bottom View)
NF Gpg gfg gog
VDS = 10V, ID = 10mA
Absolute maximum ratings are limiting values above which J309 serviceability may be impaired. Note 1 ‐ Note 2 ‐ Duty Cycle ≤ 3% Pulse test : PW ≤ 300µs, Note 3 ‐ Measured at optimum input noise match Components Micross Europe
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