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3N166

Part Number	3N166
Manufacturer	Micross
Description	Amplifier
Published	Jun 9, 2011
Detailed Description	3N166 P-CHANNEL MOSFET The 3N166 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FO...
Datasheet	3N166 PDF File

Overview

3N166 P-CHANNEL MOSFET The 3N166 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N166 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well suited Storage Temperature ‐65°C to +200°C for high reliability and harsh environment applications.
Operating Junction Temperature ‐55°C to +150°C Lead Temperature (Soldering, 10 sec.
) +300°C (See Packaging Information).
Maximum Power Dissipation Continuous Power Dissipation (one side) 300mW 3N166 Features: Total Derating above 25°C 4.
2 mW/°C MAXIMUM CURRENT Very high Input Impedance Drain Current 50mA Low Capacitanc...

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