2N5908 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
The 2N5908 is a high-performance monolithic dual JFET featuri...
2N5908 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
The 2N5908 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications where tight tracking is required. The hermetically sealed TO-78 package is well suited for hi-reliability and harsh environment applications. (See Packaging Information). FEATURES LOW DRIFT ULTRA LOW LEAKAGE LOW PINCHOFF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) | VGS1‐2 / T| = 5µV/°C TYP. IG = 150fA TYP. Vp = 2V TYP.
2N5908 Benefits:
Tight Tracking Good matching Ultra Low Leakage Low Drift
Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each
Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 40V ‐VDSO Drain to Source Voltage 40V ‐IG(f) Gate Forward Current 10mA ‐IG Gate Reverse Current 10µA Maximum Power Dissipation Device Dissipation @ Free Air – Total 40mW @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | VGS1‐2 / T| max. DRIFT VS. 20 µV/°C VDG=10V, ID=30µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 10 mV VDG=10V, ID=30µA TYP. 60 ‐‐ 300 100 1 400 2 2 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 1 ‐‐ 0.1 0.01 90 90 ‐‐ 20 ‐‐ ‐‐ ‐‐ MAX. ‐‐ ‐‐ 500 ...
