2N4117A

2N4117A N-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N4117A The 2N4117A is an Ultra-High Input Impedance N-Channel JFET The 2N4117A provides ultra-high input impedance. The device is specified with a 1-pA limit and typically operates at 0.2 pA. The part is ideal for use as a highimpedance sensitive front-end amplifier. FEATURES  DIRECT REPLACEMENT FOR SILICONIX 2N4117A  LOW POWER  MINIMUM CIRCUIT LOADING  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Gate Current (Note 1)  MAXIMUM VOLTAGES  Gate to Drain or Gate to Source (Note 2)    IDSS<90 µA   IGSS<1 pA  www.DataSheet4U.com 2N4117A Benefits: ƒ ƒ ƒ ƒ Insignificant Signal Loss / Error Voltage with High-Impedance Source Low Power Consumption (Battery) Maximum Signal Output, Low Noise High Sensitivity to Low-Level Signals ‐65°C to +175°C  ‐55°C to +150°C  300mW  50mA  ‐40V    2N4117A Applications: ƒ ƒ ƒ ƒ High-Impedance Transducer Smoke Detector Input Infrared Detector Amplifier Precision Test Equipment   2N4117A ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  CONDITIONS  BVGSS  Gate to Source Breakdown Voltage  ‐40  ‐‐  ‐‐  V  IG = ‐1µA,   VDS = 0V  VGS(off)  Gate to Source Cutoff Voltage  ‐0.6  ‐‐  ‐1.8  V                    VDS = 10V,   ID = 1nA  IDSS  Gate to Source Saturation Curr...