BSC265N10LSF G
OptiMOS™2 Power-Transistor
Features • N-channel, logic level • Very low gate charge x R DS(on) product (...
BSC265N10LSF G
OptiMOS™2 Power-
Transistor
Features N-channel, logic level Very low gate charge x R DS(on) product (FOM)
Product Summary V DS R DS(on),max ID PG-TDSON-8 100 26.5 40 V mΩ A
Ideal for high-frequency switching and synchronous rectification Low on-resistance R DS(on) Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application 150 °C operating temperature Halogen-free according to IEC61249-2-21
www.DataSheet4U.com
Type BSC265N10LSF G
Package PG-TDSON-8
Marking 265N10LS
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R thJA=50 K/W 2) Pulsed drain current3) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=40 A, R GS=25 Ω Value 40 26 6.5 160 68 ±20 78 -55 ... 150 55/150/56 mJ V W °C Unit A
Rev. 2.08
page 1
2009-11-04
BSC265N10LSF G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R thJC bottom top Thermal resistance, junction - ambient R thJA minimal footprint 6 cm2 cooling area 2) 1.6 18 62 50 K/W Values typ. max. Unit
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA...
