BSC252N10NSF G
OptiMOS™2 Power-Transistor
Features Very low gate charge for high frequency applications Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM)
Product Summary V DS R DS(on),max ID PG-TDSON-8 100 25.2 40 V mΩ A
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Low on-resistance R DS(on) 150 °C operating tempera...
