CP761R

PROCESS Small Signal MOSFET CP761R P-Channel Enhancement-Mode MOSFET Chip www.DataSheet4U.com PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 14.2 x 14.2 MILS 3.9 MILS 3.94 x 3.94 MILS 3.94 x 7.08 MILS Al-Si - 35,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 6 INCH WAFER 123,000 PRINCIPAL DEVICE TYPES CEDM8001 CMNDM8001 R1 (2-September 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP761R Typical Electrical Characteristics R1 (2-September 2010) w w w. c e n t r a l s e m i . c o m ...