Power MOSFET
Polar2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH42N50P2 IXFT42N50P...
Description
Polar2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH42N50P2 IXFT42N50P2
VDSS = ID25 =
RDS(on) ≤
500V 42A 145mΩ
TO-247 (IXFH)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL Tsold
Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268
Maximum Ratings
500
V
500
V
± 30
V
± 40
V
42
A
126
A
42
A
1.4
J
15
V/ns
830
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13 / 10
6 4
Nm/lb.in.
g g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
500
V
2.5
4.5 V
±100 nA
10 μA 1 mA
145 mΩ
G D S
TO-268 (IXFT)
D (Tab)
G S D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z International Standard Packages z Fast Intrinsic Diode z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance
Advantages
z High Power Density z Easy to Mount z Space Savings
Applications
z Switch-Mode and Resonant-Mode Power Supplies
z DC-DC Converters z Laser Drivers z AC and DC Motor Drives z Robotics and Servo ...
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