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IXFT400N075T2 Dataheets PDF



Part Number IXFT400N075T2
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXFT400N075T2 DatasheetIXFT400N075T2 Datasheet (PDF)

Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH400N075T2 IXFT400N075T2 VDSS ID25 RDS(on) = 75V = 400A ≤ 2.3mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25.

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Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH400N075T2 IXFT400N075T2 VDSS ID25 RDS(on) = 75V = 400A ≤ 2.3mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 75 75 ± 20 ± 30 400 160 1000 200 1.5 15 1000 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g G D S D (Tab) TO-268 (IXFT) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z z 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 300 260 1.13 / 10 6 4 Characteristic Values Min. Typ. Max. 75 2.0 4.0 ±200 25 International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID = 100A, Notes 1 & 2 V V nA μA z z Easy to Mount Space Savings High Power Density Applications z z z 1.5 mA 2.3 mΩ DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications www.DataSheet4U.net © 2009 IXYS CORPORATION, All Rights Reserved DS100221(12/09) IXFH400N075T2 IXFT400N075T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCH TO-247 0.21 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 200A RG = 1Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 80 130 24 2770 455 1.33 35 20 67 44 420 114 130 S nF pF pF Ω ns ns ns ns nC nC nC 0.15 ° C/W ° C/W e 1 2 3 TO-247 (IXFH) Outline ∅P Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS ISM VSD trr IRM QRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 100A, VGS = 0V, Note 1 IF = 100A, VGS = 0V -di/dt = 100A/μs VR = 37.5V 77 5.4 210 Characteristic Values Min. Typ. Max. 400 1200 1.2 A A V ns A nC Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXFT) Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Includes lead resistance. Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH400N075T2 IXFT400N075T2 Fig. 1. Output Characteristics @ T J = 25ºC 350 300 250 VGS = 15V 10V 8V 400 350 7V 300 VGS = 15V 10V 8V Fig. 2. Extended Output Characteristics @ T J = 25ºC 7V ID - Amperes 200 150 100 50 6V ID - Amperes 250 6V 200 150 100 50 4V 0 5V 5V 4V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 150ºC 350 300 250 VGS = 15V 10V 8V 7V 2.4 2.2 2.0 Fig. 4. RDS(on) Normalized to ID = 200A Value vs. Junction Temperature VGS = 10V R DS(on) - Normalized ID - Amperes 6V 200 150 100 50 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 5V 1.8 1.6 1.4 1.2 1.0 I D = 400A I D = 200A 4V 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 200A vs. Drain Current 2.4 2.2 2.0 1.8 1.6 1.4 1.2 TJ = 25ºC 1.0 0.8 0 50 100 150 200 250 300 350 400 VGS = 10V 15V TJ = 175ºC 180 160 140 120 Fig. 6. Drain Current vs. Case Temperature External Lead Current limit R DS(on) - Normalized ID - Amperes 10.


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