DatasheetsPDF.com

IXFH340N075T2 Dataheets PDF



Part Number IXFH340N075T2
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXFH340N075T2 DatasheetIXFH340N075T2 Datasheet (PDF)

Advance Technical Information TrenchT2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH340N075T2 IXFT340N075T2 VDSS ID25 RDS(on) = 75V = 340A ≤ 3.2mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum .

  IXFH340N075T2   IXFH340N075T2



Document
Advance Technical Information TrenchT2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH340N075T2 IXFT340N075T2 VDSS ID25 RDS(on) = 75V = 340A ≤ 3.2mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 75 75 ± 20 340 160 850 170 960 935 -55 ... +175 175 -55 ... +175 V V V A A A A mJ W °C °C °C °C °C Nm/lb.in. g g G D S D (TAB) TO-268 (IXFT) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 300 260 1.13 / 10 6 4 Features z z International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID = 100A, Note 1 Characteristic Values Min. Typ. Max. 75 2.0 4.0 ±200 25 V V nA μA z z Easy to Mount Space Savings High Power Density Applications z z z 1.5 mA 3.2 mΩ DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications www.DataSheet4U.net © 2009 IXYS CORPORATION, All Rights Reserved DS100194(9/09) IXFH340N075T2 IXFT340N075T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCH TO-247 0.21 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 65 110 19 2230 490 1.7 26 50 60 35 300 68 70 S nF pF pF Ω ns ns ns ns nC nC nC 0.16 ° C/W ° C/W e 1 2 3 TO-247 (IXFH) Outline ∅P Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS ISM VSD trr IRM QRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 100A, VGS = 0V, Note 1 IF = 170A, VGS = 0V -di/dt = 100A/μs VR = 37.5V 75 4.4 165 Characteristic Values Min. Typ. Max. 340 1360 1.3 A A V ns A nC Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXFT) Outline Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain ADVANCE T.


IXFT320N10T2 IXFH340N075T2 IXFT340N075T2


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)