Document
Advance Technical Information
TrenchT2TM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH340N075T2 IXFT340N075T2
VDSS ID25
RDS(on)
= 75V = 340A ≤ 3.2mΩ
TO-247 (IXFH)
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 75 75 ± 20 340 160 850 170 960 935 -55 ... +175 175 -55 ... +175 V V V A A A A mJ W °C °C °C °C °C Nm/lb.in. g g
G
D
S
D (TAB)
TO-268 (IXFT) G S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268
300 260 1.13 / 10 6 4
Features
z z
International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages
z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID = 100A, Note 1
Characteristic Values Min. Typ. Max. 75 2.0 4.0 ±200 25 V V nA μA
z z
Easy to Mount Space Savings High Power Density
Applications
z z z
1.5 mA 3.2 mΩ
DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications
www.DataSheet4U.net
© 2009 IXYS CORPORATION, All Rights Reserved
DS100194(9/09)
IXFH340N075T2 IXFT340N075T2
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCH TO-247 0.21 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 65 110 19 2230 490 1.7 26 50 60 35 300 68 70 S nF pF pF Ω ns ns ns ns nC nC nC 0.16 ° C/W ° C/W
e
1 2 3
TO-247 (IXFH) Outline
∅P
Terminals: 1 - Gate 3 - Source
2 - Drain Tab - Drain
Dim.
Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS ISM VSD trr IRM QRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 100A, VGS = 0V, Note 1 IF = 170A, VGS = 0V -di/dt = 100A/μs VR = 37.5V 75 4.4 165 Characteristic Values Min. Typ. Max. 340 1360 1.3 A A V ns A nC
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 (IXFT) Outline
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
ADVANCE T.