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IXFH320N10T2 Dataheets PDF



Part Number IXFH320N10T2
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXFH320N10T2 DatasheetIXFH320N10T2 Datasheet (PDF)

TrenchT2TM HiperFETTM Power MOSFET IXFH320N10T2 IXFT320N10T2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on) ≤ 100V 320A 3.5mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 17.

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TrenchT2TM HiperFETTM Power MOSFET IXFH320N10T2 IXFT320N10T2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on) ≤ 100V 320A 3.5mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 100A, Notes 1 & 2 Maximum Ratings 100 V 100 V ± 20 V ± 30 V 320 A 160 A 800 A 160 A 1.5 J 15 V/ns 1000 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13 / 10 6 4 Nm/lb.in. g g Characteristic Values Min. Typ. Max. 100 V 2.0 4.0 V ±200 nA 25 μA 1.75 mA 3.5 mΩ G DS D (Tab) TO-268 (IXFT) G S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z Synchronous Recification z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC Motor Drives z Uninterruptible Power Supplies z High Speed Power Switching Applications © 2012 IXYS CORPORATION, All Rights Reserved DS100237A(5/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz RGi Gate Input Resistance td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RthJC RthCH TO-247 Characteristic Values Min. Typ. Max. 80 130 S 26 nF 2250 pF 450 pF 1.48 Ω 36 ns 46 ns 73 ns 177 ns 430 nC 110 nC 125 nC 0.15 °C/W 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IF = 150A, VGS = 0V IRM -di/dt = 100A/μs QRM VR = 50V Characteristic Values Min. Typ. Max. 320 A 1200 A 1.2 V 98 ns 6.6 A 320 nC IXFH320N10T2 IXFT320N10T2 TO-247 (IXFH) Outline 123 ∅P e Terminals: 1 - Gate 3 - Source 2 - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXFT) Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Includes lead resistance. Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 ID - Amperes IXFH320N10T2 IXFT320N10T2 Fig. 1. Output Characteristics @ TJ = 25ºC 320 VGS = 15V 280 10V 8V 240 7V 200 6V 160 120 5V 80 40 4V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VDS - Volts Fig. 3. Output Characteristics @ TJ = 150ºC 350 VGS = 15V 10V 300 8V 7V 250 6V 200 150 5V 100 50 4V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 160A vs. Drain Current 3.2 VGS = 10V 2.8 TJ = 175ºC 2.4 2.0 1.6 1.2 0.8 0 TJ = 25ºC 50 100 150 200 250 300 350 400 ID - Amperes ID - Amperes RDS(on) - Normalized ID - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC 400 VGS = 15V 350 10V 7V 300 250 6V 200 150 5V 100 50 4V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 160A Value vs. Junction Temperature 2.8 VGS = 10V 2.4 2.0 I D = 320A I D = 160A 1.6 1.2 0.8 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade 180 160 140 120 100 80 60 40 20 0 -50 Fig. 6. Drain Current vs. Case Temperature External Lead Current limit -25 0 25 50 75 100 125 150 175 TC - Degrees Centigr.


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