Document
TrenchT2TM HiperFETTM Power MOSFET
IXFH320N10T2 IXFT320N10T2
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
VDSS = ID25 =
RDS(on) ≤
100V 320A 3.5mΩ
TO-247 (IXFH)
Symbol
VDSS VDGR
VGSS VGSM
ID25 ILRMS IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL Tsold
Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 100A, Notes 1 & 2
Maximum Ratings
100
V
100
V
± 20
V
± 30
V
320
A
160
A
800
A
160
A
1.5
J
15
V/ns
1000
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13 / 10
6 4
Nm/lb.in.
g g
Characteristic Values Min. Typ. Max.
100
V
2.0
4.0 V
±200 nA
25 μA 1.75 mA
3.5 mΩ
G DS
D (Tab)
TO-268 (IXFT)
G S D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on)
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z Synchronous Recification z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode
Power Supplies z DC Choppers z AC Motor Drives z Uninterruptible Power Supplies z High Speed Power Switching
Applications
© 2012 IXYS CORPORATION, All Rights Reserved
DS100237A(5/12)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 60A, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi
Gate Input Resistance
td(on) tr td(off) tf
Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC RthCH
TO-247
Characteristic Values Min. Typ. Max.
80
130
S
26
nF
2250
pF
450
pF
1.48
Ω
36
ns
46
ns
73
ns
177
ns
430
nC
110
nC
125
nC
0.15 °C/W
0.21
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr
IF = 150A, VGS = 0V
IRM
-di/dt = 100A/μs
QRM
VR = 50V
Characteristic Values Min. Typ. Max.
320 A
1200 A
1.2 V
98
ns
6.6
A
320
nC
IXFH320N10T2 IXFT320N10T2
TO-247 (IXFH) Outline
123
∅P
e
Terminals: 1 - Gate 3 - Source
2 - Drain
Dim. Millimeter Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13 b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65 Q 5.89 6.40
R 4.32 5.49 S 6.15 BSC
Inches Min. Max.
.185 .209 .087 .102 .059 .098
.040 .055 .065 .084 .113 .123
.016 .031 .819 .845 .610 .640
0.205 0.225 .780 .800 .177
.140 .144 0.232 0.252
.170 .216 242 BSC
TO-268 (IXFT) Outline
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Includes lead resistance.
Terminals: 1 - Gate
2 - Drain
3 - Source 4 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
ID - Amperes
IXFH320N10T2 IXFT320N10T2
Fig. 1. Output Characteristics @ TJ = 25ºC
320
VGS = 15V
280
10V
8V
240
7V
200 6V
160
120 5V
80
40 4V
0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
350
VGS = 15V
10V
300
8V
7V
250 6V
200
150 5V
100
50
4V 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 160A
vs. Drain Current
3.2
VGS = 10V 2.8
TJ = 175ºC
2.4
2.0
1.6
1.2
0.8 0
TJ = 25ºC
50
100
150
200
250
300
350
400
ID - Amperes
ID - Amperes
RDS(on) - Normalized
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
400
VGS = 15V
350
10V
7V
300
250
6V
200
150
5V
100
50 4V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 160A Value vs. Junction Temperature
2.8
VGS = 10V 2.4
2.0
I D = 320A
I D = 160A 1.6
1.2
0.8
0.4
-50
-25
0
25
50
75
100 125 150 175
TJ - Degrees Centigrade
180 160 140 120 100
80 60 40 20
0 -50
Fig. 6. Drain Current vs. Case Temperature
External Lead Current limit
-25
0
25
50
75 100 125 150 175
TC - Degrees Centigr.