IXFH24N80P

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 24N80P IXFK 24N80P IXFT 24N80P VDSS = 800 V ID25 = 24 A RDS(on) ≤ 400 mΩ ≤ 250 ns trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 800 800 ±30 ±40 24 55 12 50 1.5 10 650 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J TO-247 (IXFH) G D S D (TAB) TO-268 (IXFT) Case Style G V/ns W °C °C °C S D (TAB) TO-264 AA (IXFK) Mounting torque (TO-247 & TO-264) TO-247 TO-268 TO-264 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s 1.13/10 Nm/lb.in. 6 5 10 300 260 g g g °C °C G D S (TAB) TL TSOLD G = Gate S = Source Features D = Drain Tab = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 1000 400 V V nA μA μA mΩ z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Easy to mount Sp...