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IXFV20N80PS Dataheets PDF



Part Number IXFV20N80PS
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description PolarHV HiPerFET Power MOSFET
Datasheet IXFV20N80PS DatasheetIXFV20N80PS Datasheet (PDF)

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV 20N80P 20N80P 20N80P 20N80PS VDSS ID25 RDS(on) trr = 800 V = 20 A ≤ 520 m Ω ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs.

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV 20N80P 20N80P 20N80P 20N80PS VDSS ID25 RDS(on) trr = 800 V = 20 A ≤ 520 m Ω ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C Maximum Ratings 800 800 ± 30 ± 40 20 50 10 30 1.0 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C TO-247 (IXFH) (TAB) TO-268 (IXFT) G S D (TAB) PLUS220 (IXFV) G D S D (TAB) Maximum lead temperature for soldering Plastic case for 10 s Mounting torque (TO-247) Mounting force (PLUS220) TO-247 TO-268 PLUS220 types 300 260 PLUS220 SMD(IXFV..S) 1.13/10 Nm/lb.in. 1..65 / 2.5..15 6 5.5 4 N/lb g g g G S D (TAB) G = Gate S = Source Features D = Drain Tab = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ± 200 25 1000 520 V V nA µA µA mΩ l l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID = 10 A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS99511E(03/06) www.DataSheet4U.net © 2006 IXYS All rights reserved IXFH 20N80P IXFT 20N80P IXFV 20N80P IXFV 20N80PS Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. 14 23 4685 VGS = 0 V, VDS = 25 V, f = 1 MHz 356 26 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A RG = 2 Ω (External) 24 85 24 86 VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A 27 24 0.25 (TO-247, PLUS220) 0.21 S pF pF pF ns ns ns ns nC nC nC ° C/W ° C/W gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS = 20 V; ID = 10 A, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. 20 50 1.5 250 0.8 6.0 A A V ns µC A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 25A, -di/dt = 100 A/µs VR = 100V; VGS = 0 V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH 20N80P IXFT 20N80P IXFV 20N80P IXFV 20N80PS Fig. 1. Output Characte ris tics @ 25º C 20 18 16 14 V GS = 10V 7V 6V 36 32 28 6V V GS = 10V 7V Fig. 2. Exte nde d Output Characte ris tics @ 25º C I D - Amperes 12 10 8 6 4 2 0 0 2 4 6 8 10 12 5V I D - Amperes 24 20 16 12 8 4 0 0 3 6 9 12 15 18 21 24 27 30 5V V D S - V olts Fig. 3. Output Characte ris tics @ 125º C 20 18 16 14 V GS = 10V 7V 2.6 2.4 2.2 V GS = 10V V D S - V olts Fig. 4. RDS(on ) Norm alize d to ID = 10A V alue vs . Junction Te m pe ratur e R D S ( o n ) - Normalized 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 I D = 20A I D = 10A I D - Amperes 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 6V 5V 16 18 20 22 -50 -25 0 25 50 75 100 125 150 V D S - V olts Fig. 5. RDS(on) Nor m alize d to ID = 10A V alue vs . Drain Curre nt 2.6 2.4 V GS = 10V TJ = 125 º C 22 20 18 16 TJ - Degrees Centigrade Fig. 6. Dr ain Curr e nt vs . Cas e Te m pe r ature R D S ( o n ) - Normalized 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 I D - Amperes TJ = 25 º C 30 35 40 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 I D - A mperes TC - Degrees Centigrade © 2006 IXYS All rights reserved IXFH 20N80P IXFT 20N80P IXFV 20N80P IXFV 20N80PS Fig. 7. Input Adm ittance 24 40 35 30 TJ = -40 º C 25 º C 125 º C Fig. 8. Tr ans conductance 20 16 TJ = 125 º C 12 25 º C -40 º C 8 4 I D - Amperes - Siemens 25 20 15 10 5 0 0 3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5 5.75 g 0 fs 5 10 15 20 25 V G S - V olts Fig. 9. Source Cur r e nt vs . Sour ce -To-Dr ain V oltage 60 50 40 10 9 8 7 V DS = 400V I D = 10A I G = 10m A I D - A mperes Fig. 10. Gate Char ge I S - Amperes V G S - Volts TJ = 25 º C 0.9 1 1.1 1.2 6 5 4 3 2 1 30 20 10 0 0.4 0.5 0.6 0.7 0.8 TJ = 125 º C 0 0 10 20 30 40 50 60 70 80 90 V S D - V olts Fig. 11. Capacitance 10000 1.00 Q G - nanoCoulombs Fig. 12. M axim um Tr ans ie nt The rm al Re s is tance Capacitance - picoFarads C is s 1000 R ( t h ) J C - ºC / W 0.10 C os s 100 f = 1MH z 10 0 5 10 15 C rs s 20 25 30 35 40 0.01 0.1 1 10 100 1000 V D S - V olts IXYS reserves the right to c.


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