PolarHV Power MOSFET
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH 16N80P IXFT 16N80P IXFV 16N8...
Description
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS
VDSS = 800 V ID25 = 16 A RDS(on) ≤ 600 mΩ ≤ 250 ns trr
TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 800 800 ±30 ±40 16 40 8 30 1.0 10 V V V V A A A mJ J V/ns
G S G D
S
TO-268 (IXFT)
D (TAB)
PLUS220 (IXFV)
PD TJ TJM Tstg TL TSOLD Md FC Weight
460 -55 ... +150 150 -55 ... +150
W °C °C °C °C °C
G
D
S
D (TAB)
PLUS220SMD (IXFV...S)
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-247) Mounting force (PLUS220) TO-247 TO-268 PLUS220 & PLUS220SMD
300 260
1.13/10 Nm/lb.in. 11..65/2.5..15 6.0 5.0 4.0 N/lb g g g
G S G = Gate S = Source D (TAB) D = Drain TAB = Drain
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 250 600 V V nA μA μA mΩ
Features z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space sav...
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