Power MOSFET
Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated
IXFH160...
Description
Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated
IXFH160N15T
VDSS ID25
RDS(on)
= 150V = 160A ≤ 9.6mΩ
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS dV/dt Pd TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum 150 150 ± 30 160 75 430 5 1 10 830 -55 ... +175 175 -55 ... +175
Ratings V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. g
TO-247 (IXFH)
G
D
S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque
300 260 1.13 / 10 6
Features
z
z
z
Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature
Advantages
z z z
Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 150°C
Characteristic Values Min. Typ. Max. 150 2.5 5.0 V V
Applications
z z z
± 200 nA 5 μA 250 μA 8.0 9.6 mΩ
z z z z
VGS = 10V, ID = 0.5 ID25, Note 1
DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Uninterruptible power supplies High speed power switching applic...
Similar Datasheet