DatasheetsPDF.com

IXFH160N15T

IXYS Corporation

Power MOSFET

Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH160...


IXYS Corporation

IXFH160N15T

File Download Download IXFH160N15T Datasheet


Description
Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH160N15T VDSS ID25 RDS(on) = 150V = 160A ≤ 9.6mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS dV/dt Pd TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum 150 150 ± 30 160 75 430 5 1 10 830 -55 ... +175 175 -55 ... +175 Ratings V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. g TO-247 (IXFH) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque 300 260 1.13 / 10 6 Features z z z Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 150°C Characteristic Values Min. Typ. Max. 150 2.5 5.0 V V Applications z z z ± 200 nA 5 μA 250 μA 8.0 9.6 mΩ z z z z VGS = 10V, ID = 0.5 ID25, Note 1 DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Uninterruptible power supplies High speed power switching applic...




Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)