DatasheetsPDF.com

IXFH110N25T

Part Number	IXFH110N25T
Manufacturer	IXYS Corporation
Description	TrenchHV Power MOSFET HiPerFET
Published	May 30, 2011
Detailed Description	TrenchHVTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH110N25T VDSS ID25 RDS(on) = 250V = ...
Datasheet	IXFH110N25T PDF File

Overview

TrenchHVTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH110N25T VDSS ID25 RDS(on) = 250V = 110A ≤ 24mΩ Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 250 250 ± 20 ± 30 110 75 300 25 1 10 694 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.
in.
g TO-247 (IXFH) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z International standard pack...

Similar Datasheet

IXFH110N25T TrenchHV Power MOSFET HiPerFET - IXYS Corporation

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)