HiPerFET Power MOSFETs ISOPLUS247
HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM
(Electrically Isolated Back Surface) Single Die MOSFET
VDSS ID25 RDS(o...
Description
HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM
(Electrically Isolated Back Surface) Single Die MOSFET
VDSS ID25 RDS(on)
= 500 V = 48 A = 90 mΩ
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 500 500 ± 20 ± 30 48 220 55 60 3 5 400 -40 ... +150 150 -40 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~
ISO264TM
G D S
(TAB)
G = Gate S = Source
D = Drain
Features
z
z z z z
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS Mounting torque t = 1 min
300 2500
0.4/6 Nm/lb-in
z
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<50pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier
5
g Applications
z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 V 4.5 V ±200 nA TJ = 25°C TJ = 125°C 25 µA 2 mA 90 mΩ
z z
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Note 1
z z
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