IXFB30N120P

Preliminary Technical Information PolarVHVTM HiPerFET IXFB30N120P Power MOSFET N-Channel Enhancement Mode VDSS = 1200 V ID25 = 30 A RDS(on) ≤ 350 mΩ ≤ 300 ns trr Symbol VDSS VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 1 Ω TC = 25°C Maximum Ratings 1200 ±30 ±40 30 75 10 60 3 15 1250 -55 ... +150 150 -55 ... +150 V V V A A A mJ J V/ns PLUS264TM (IXFB) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features W °C °C °C °C °C N/lb g z z z Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting force 300 260 30..120/7.5...2.7 10 Advantages z z z Plus 264TM package for clip or spring mounting Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 1 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 1200 3.5 6.5 ±200 25 3000 350 V V nA μA μA mΩ VGS = 10 V, ID = 0.5 ID25, Note 1 www.DataSheet4U.net © 2007 IXYS CORPORATION, All rights reserved DS99825 (04/07) IXFB30N120P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ....