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IXFB300N10P

Part Number	IXFB300N10P
Manufacturer	IXYS Corporation
Description	Polar Power MOSFET HiPerFET
Published	May 30, 2011
Detailed Description	Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intri...
Datasheet	IXFB300N10P PDF File

Overview

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB300N10P VDSS ID25 RDS(on) trr = = ≤ ≤ 100V 300A 5.
5mΩ 200ns PLUS264TM (IXFB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10s Mounting force Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C Leads Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 100 100 ±20 ±30 300 75 900 100 3 20 1500 -55 .
.
.
+175 175 -55 .
.
.
+175 300 260 30.
.
...

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IXFB300N10P Polar Power MOSFET HiPerFET - IXYS Corporation

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