IXFB50N80Q2

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C IXFB50N80Q2 VDSS ID25 RDS(on) trr = = ≤ ≤ 800V 50A 160mΩ 300ns PLUS264 Maximum Ratings 800 800 ± 30 ± 40 50 200 50 5 20 1135 -55 ... +150 150 -55 ... +150 300 260 10 V V V V A A A J V/ns W °C °C °C °C °C g Features Double Metal Process for Low Gate Resistance Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Easy to Mount Space Savings High Power Density Applications Switch-Mode and Resonant-Mode Power Supplies >500kHz Switching DC-DC Converters DC Choppers Pulse Generation Laser Drivers V G D Tab S G = Gate S = Source D = Drain Tab = Drain Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 8mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.5 V ± 200 nA 50 µA 3 mA 160 mΩ VGS = 10V, ID = 0.5 ID25, Note 1 www.DataSheet4U.net © 2010 IXYS CORPORATION, All Rights Reserved DS99005D(01/10) IXFB50N80Q2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified)...