SIHFP450N

IRFP450N, SiHFP450N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 77 26 34 Single D FEATURES 500 0.37 Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss Specified Lead (Pb)-free RoHS COMPLIANT TO-247 APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching G TYPICAL SMPS TOPOLOGIES S D G S N-Channel MOSFET Two Transistor Forward Half Bridge and Full Bridge PFC Boost ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP450NPbF SiHFP450N-E3 IRFP450N SiHFP450N ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.net SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 500 ± 30 14 8.8 56 1.6 170 14 20 200 5.0 - 55 to + 150 300d 10 1.1 UNIT V Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a. b. c. d. A W/°C mJ A mJ W V/ns °C lbf · in N·m TC = 25 °C for 10 s 6-32 or M3 screw Repetiti...