IRFP450A

IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 64 16 26 Single D FEATURES 500 0.40 Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance Avalanche Voltage and Current Effective Coss Specified Lead (Pb)-free Available and Available RoHS* COMPLIANT TO-247 APPLICATIONS Switch Mode Power Supply (SMPS) G Uninterruptable Power Supply High Speed Power Switching S D G S N-Channel MOSFET TYPICAL SMPS TOPOLOGIES Two Transistor Forward Half Bridge, Full Bridge PFC Boost ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP450APbF SiHFP450A-E3 IRFP450A SiHFP450A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.net SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM EAS IAR EAR PD dV/dt TJ, Tstg Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque TC = 25 °C for 10 s 6-32 or M3 screw LIMIT 500 ± 30 14 8.7 56 1.5 760 14 19 190 4.1 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m Notes a. Repet...