SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • World...
SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Worldwide best R DS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance
P-TO220-3-31
1 2 3
V DS RDS(on) ID
PG-TO262 PG-TO220FP
650 0.19 20.7
PG-TO220
V Ω A
Type
Package
Ordering Code
SPP20N65C3 SPA20N65C3 SPI20N65C3
Maximum Ratings Parameter
PG-TO220 PG-TO220FP PG-TO262
Q67040-S4556 SP000216362 Q67040-S4560
Marking 20N65C3 20N65C3 20N65C3
Symbol ID
Value SPP_I SPA
Unit
Continuous drain current
TC = 25 °C TC = 100 °C
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A 20.7 13.1 20.71) 13.11) 62.1 690 1 7 ±20
±30
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=3.5A, VDD=50V
ID puls EAS EAR IAR VGS VGS Ptot
62.1 690 1 7 ±20
±30
A mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7A, VDD =50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
A V W
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
208
34.5
Operating and storage temperature
Rev. 3.1 Page 1
T j , Tstg
-55...+150
°C
2009-12-01
SPP20N65C3, SPA20N65C3 SPI20N65C3
Maximum Ratings Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 480 V, ID = 20.7 A, T j = 125 °C
dv/dt
50
V/ns
Thermal Characteristics Parameter Symbol min. RthJC Values typ. max. Unit
Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Ther...