SPI20N60CFD

SPI20N60CFD Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme d v/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 0.22 20.7 PG-TO262 V Ω A Type SPI20N60CFD Maximum Ratings Parameter Package PG-TO262 Pb-free Yes Marking 20N60CFD Symbol ID Value 20.7 13.1 52 690 1 20 40 ±20 ±30 208 -55... +150 Unit A Continuous drain current T C = 25 °C T C = 100 °C Pulsed drain current, t p limited by T jmax www.DataSheet4U.net ID puls EAS Avalanche energy, single pulse ID = 10 A, V DD = 50 V mJ Avalanche energy, repetitive t AR limited by T jmax 1) EAR ID = 20 A, V DD = 50 V Avalanche current, repetitive t AR limited by T jmax Reverse diode d v/dt IS=20.7A, V DS=480V, T j=125°C IAR dv/dt VGS VGS Ptot Tj , Tstg A V/ns V W °C 2007-02-01 Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C Operating and storage temperature Rev. 2.5 Page 1 SPI20N60CFD Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 20.7 A, Tj = 125 °C Symbol dv/dt di F/dt Value 80 900 Unit V/ns A/µs Maximum diode commutation speed V DS = 480 V, ID = 20.7 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, wavesoldering 1.6 mm (0.063 in.) f...