HiPerFAST IGBT
Advanced Technical Information
HiPerFASTTM IGBT with Diode
IXGA 7N60BD1 IXGP 7N60BD1
VCES IC25 VCE(sat) tfi
= 600 V ...
Description
Advanced Technical Information
HiPerFASTTM IGBT with Diode
IXGA 7N60BD1 IXGP 7N60BD1
VCES IC25 VCE(sat) tfi
= 600 V = 14 A = 2.0 V = 150ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 18 Ω Clamped inductive load @ 0.8 VCES TC = 25°C
Maximum Ratings 600 600 ±20 ±30 14 7 56 ICM = 14 80 -55 ... +150 150 -55 ... +150 300 M3 M3.5 V V V V A A A A
G E C (TAB)
G C E
TO-220AB (IXGP)
TO-263 AA (IXGA)
W °C °C °C °C Features G = Gate, E = Emitter, C = Collector, TAB = Collector
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md
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International standard packages
0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g JEDEC TO-263 surface mountable and JEDEC TO-220 AB High current handling capability HiPerFASTTM HDMOSTM process MOS Gate turn-on - drive simplicity Applications
Mounting torque, (TO-220) TO-220 TO-263
Weight
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 5.5 100 750 ±100 1.8 2.0 V V µA µA nA V
Uninterruptible power supplies (UPS) Switched-mode and resonant-mode AC motor speed control DC servo and robot drives DC choppers
Advantages power supplies
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VCE = VGE TJ = 25°C TJ = 125°C
VCE = 0.8 VCES VGE = 0 V...
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